Abstract
AbstractWe have developed organic‐inorganic hybrid Schottky‐type photodetectors with conducting polymer as a window layer on ZnSSe/p‐GaAs wafers. Photodetector wafers used in this study were grown by molecular beam epitaxy (MBE). We used poly (3,4‐ethylenedioxythiophene): poly (styrenesulfonate) (PEDOT:PSS) as conducting polymer window layers formed by spin coating technique on the semiconductor ZnSSe layers. We have succeeded in fabrication of new polymer/ZnSSe structure photodiodes on p‐GaAs substrates. The present device has exhibited very high blue‐ultraviolet external quantum efficiency ηex = 68 ∼ 87% without anti‐reflection coating. The external quantum efficiency in the UV region is ηex = 81% (wavelength: 300 nm), which is higher than that of commercial Si UV‐photodiode of ηex = 54%. Furthermore, the device exhibits deep UV quantum efficiency ηex = 71% (wavelength: 250 nm). A dark current density is as low as 10 pA/mm2 at a reverse bias voltage of 10 V by using Pt guard‐ring structure. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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