High-Sensitive Sensing Elements Based on Spin Valves with Antiferromagnetic Interlayer Coupling

Abstract

Spin valves Ta/(Ni80Fe20)60Cr40/Co70Fe20Ni10/Cu/Co70Fe20Ni10/Ru/Co70Fe20Ni10/Fe50Mn50/Ta have been prepared by magnetron sputtering. It was found that the shift of low-field hysteresis loop with respect to H = 0 oscillates as the copper layer thickness changes. Structural studies showed the high perfection of the layer microstructure. Films of spin valves with the copper layer thickness corresponding to the second antiferromagnetic RKKI interaction maximum have been synthesized. They exhibit zero shift of low-field hysteresis loop and are characterized by high magnetoresistance effect. Sensing elements in the form of meanders prepared using the films demonstrate the almost anhysteretical field dependence of magnetoresistance and a magnetoresistive sensitivity of 0.5%/Oe.