Abstract
Here we report the fabrication of a high performance metal oxide semiconductor (MOS) sensor for the detection of hydrogen sulfide (H2S) using PdRh bimetal hollow nanocube (HC) with Rh-rich hollow frame and Pd-rich core frame as sensitizing materials. PdRh bimetal HC with the edge-length about 10 nm was prepared by chemical etching PdRh bimetal solid nanocube (SC) in HNO3 aqueous solution. The results of gas-sensing tests indicate that the response value order of the MEMS gas sensors based on MOSs (including ZnO, MoO3 and SnO2) is as follows: RPdRhHC/MOS > RPdRhSC/MOS > RMOS. First, in the system of ZnO, gas sensor modified by PdRh (PdRh SC/ZnO and PdRh HC/ZnO) possess enhanced H2S sensing performance with a better response and excellent low-concentration detection capability (down to 15 ppb) comparing to pure ZnO. The improved H2S sensing performance could be attributed to the good conductivity of Rh-rich frame, the high catalytic activity of PdRh bimetal and formation of Schottky barrier-type junctions and defect. Second, PdRh HC/ZnO sensor shows better response (185-1 ppm of H2S) compared to PdRh SC/ZnO sensor (108-1 ppm of H2S), which is due to the higher specific surface area of PdRh HC/ZnO and good gas diffusion of the hollow structure. This work indicate that the sensitization characteristics of PdRh bimetal HC will provide new paradigms for the future development of the high performance sensor.
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