Abstract
A highly sensitive magnetoresistance behavior related to the well defined induced uniaxial anisotropy has been observed in a single spin valve deposited with conventional electron beam evaporation. An external magnetic field of 20 Oe (deposition field) was applied during the deposition to induce the anisotropy, which resulted in a marked increase of the MR ratio. Magnetoresistence changes of 4.1% (improved from 3.1% due to the application of the deposition field) for NiFe/Cu/Co and 6.3% for NiFe/Co/Cu/Co were obtained in a micro strip pattern prepared by an Ar ion milling through photoresist mask. A hysteresis free linear MR behavior has been realized in the patterned samples.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
