Abstract
Magnetic materials have long been used for signal processing structures in the microwave range. High-frequency signal processing as for band-stop or notch filters, ferromagnetic resonance frequency can be adjusted or set by magnetic properties, such as saturation magnetization Ms. In this work, Fe-Co-N thin films have been synthesized using an improved facing-target magnetron sputtering system, where the sputtering current on Co and Fe targets can be regulated independently. During deposition of Fe-Co-N thin film, parameters on Fe target followed the one for synthesis of ε-Fe3N, while changing the input current on Co target. It was found that on an unheated substrate, with the Co content of about 7 at.%, high value of Ms(265.08Am2kg-1) could be obtained in the Fe-Co-N film, which contained α"-(Fe,Co)16N2nanoparticles with the average size of 7 nm.
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