Abstract
Nanostructured zinc oxide (ZnO) in the form of aligned nanorods was synthesized on an Au-coated Si(111) substrate via galvanic-assisted chemical process. The sensing performance of the ZnO was investigated in response to the applied biasing voltage. It was found that the sensitivity, response time as well as detection limit of the ZnO sensor were dramatically improved with increasing bias voltage. This significant sensing performance is attributed to the reaction of hydrogen gas with chemisorbed oxygen ions on the surface of the ZnO nanorods that served as the electron donors to increase the sensor conductance. Higher reverse bias voltages move the electrons faster across the electrodes. This shortened the response time and, at the same time, depleted the electrons in the sensor elements and weakens oxygen adsorption. The oxygen ions could then be readily removed by hydrogen, leading to a higher sensitivity of the sensors.o
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