Abstract
In the present article, we proposed a p–n homojunction photodetector with a series Schottky barrier and a high value of responsivity in the ultraviolet region. The thin-film photodetector makes use of a junction between an RF-sputtered n-type ZnO nanostructure and a p-type copper doped ZnO (CZO) thin film derived through the spin coating process on an ITO coated glass substrate. Palladium metal contacts have been deposited to form the Schottky barrier in series with the p–n homojunction. The device has been simulated, fabricated, and tested only after ensuring the stability of the p-type CZO thin film. The measured I–V characteristics of the fabricated photodetector under illuminated and dark conditions showed excellent UV response and good rectification properties. The device exhibits a peak responsivity of 13.2 A W−1 for a reverse biasing voltage of 3 V. This value is much higher than the values reported by others for a ZnO based photodetector.
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