Abstract
In this paper, high quality Bi2Te3 films were prepared by double temperature zone vapor deposition. On this basis, Ag2S/Bi2Te3 heterojunction photodetectors were prepared by spin-coating technique. Due to the synergistic absorption effect of the two materials, and the carrier extraction and separation enhanced by the built-in electric field, the device exhibits a wide spectral response and high performance. Under 405 nm, the responsivity is 18.34 mA/W, and the response time is 33/21 ms. This work provides research experience for mixed dimensional heterojunction photodetectors based on two-dimensional materials.
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