Abstract
Photodetection with high responsivity at the wavelength of 1060 nm is highly desirable for light detection and ranging (LiDAR) as well as the recent emergence of swept-source optical coherent tomography (SS-OCT) applications. However, the absorption coefficient $\alpha $ of Si material at 1060 nm under the bias of 0 V is very low due to its approach to the absorption bandgap edge of Si material. In this letter, the carrier-collection-enhanced structure is proposed, which functions as multiple carrier collection paths, which enhances the external quantum efficiency of photodiodes. An efficient Si photodiode with responsivity of 0.49 A/W at 1060 nm at 0 V is demonstrated, which is 2.5 times of that of commercial products. The cost-effective fabrication of Si photodiodes greatly enhances the system performance of LiDAR and OCT.
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