High-responsivity self-powered deep-ultraviolet photodetector based on n-SnS2/p-GaN heterostructures

Abstract

Deep-ultraviolet (DUV) photodetectors (PDs) have important applications in various fields, however, high manufacturing costs, complex fabrication processes, and high-power consumption limit their further development. Here, the combination of physical vapor deposition (PVD) and chemical vapor deposition (CVD) methods are used to grow in-situ vertical SnS2 (v-SnS2) thin film on a gallium nitride (GaN) substrate, thereby forming a v-SnS2/GaN p-n heterojunction (type-Ⅱ). With zero bias, the device exhibits excellent self-powered performance under 265 nm illumination. The sensor has a large responsivity of 3.525 A/W, a high specific detectivity of 1.767 × 1014 Jones, a high linear dynamic range of 97 dB, and a fast response speed (rise/decay time of 150.5/266.4 µs). This work demonstrates the great potential of SnS2/GaN heterojunction devices for deep-ultraviolet detection.