High-responsivity MoS2 hot-electron telecom-band photodetector integrated with microring resonator

Abstract

We report a high-responsive hot-electron photodetector based on the integration of an Au–MoS2 junction with a silicon nitride microring resonator (MRR) for detecting telecom-band light. The coupling of the evanescent field of the silicon nitride MRR with the Au–MoS2 Schottky junction region enhances the hot-electron injection efficiency. The device exhibits a high responsivity of 154.6 mA W−1 at the wavelength of 1516 nm, and the moderately uniform responsivities are obtained over the wavelength range of 1500–1630 nm. This MRR-enhanced MoS2 hot-electron photodetector offers possibilities for integrated optoelectronic systems.