High responsivity InP-InGaAs quantum-well infrared photodetectors: characteristics and focal plane array performance

Abstract

We report the detailed characteristics of long-wavelength infrared InP-In/sub 0.53/Ga/sub 0.47/As quantum-well infrared photodetectors (QWIPs) and 640/spl times/512 focal plane array (FPA) grown by molecular beam epitaxy. For reliable assessment of the detector performance, characterization was performed on test detectors of the same size and structure with the FPA pixels. Al/sub 0.27/Ga/sub 0.73/As-GaAs QWIPs with similar spectral response (/spl lambda//sub p/=/spl sim/7.8 /spl mu/m) were also fabricated and characterized for comparison. InP-InGaAs QWIPs (20-period) yielded quantum efficiency-gain product as high as 0.46 under -3-V bias with a 77-K peak detectivity above 1/spl times/10/sup 10/ cm/spl middot/Hz/sup 1/2//W. At 70 K, the detector performance is background limited with f/2 aperture up to /spl sim/ 3-V bias where the peak responsivity (2.9 A/W) is an order of magnitude higher than that of the AlGaAs-GaAs QWIP. The results show that impact ionization in similar InP-InGaAs QWIPs does not start until the average electric-field reaches /spl sim/25 kV/cm, and the detectivity remains high under moderately large bias, which yields high responsivity due to large photoconductive gain. The InP-InGaAs QWIP FPA offers reasonably low noise equivalent temperature difference (NETD) even with very short integration times (/spl tau/).70 K NETD values of the FPA with f/1.5 optics are 36 and 64 mK under bias voltages of -0.5 V (/spl tau/=11 ms) and -2 V (/spl tau/=650 /spl mu/s), respectively. The results clearly show the potential of InP-InGaAs QWIPs for thermal imaging applications requiring high responsivity and short integration times.