Abstract
Ten-period InGaAs/InP quantum-well infrared photodetectors (QWIPs) with and without compressive strain in the quantum-well region prepared by metal organic chemical vapor deposition (MOCVD) are investigated in this study. At a detection wavelength of 8 µm, a high responsivity of 20 A/W is observed for the unstrained device, which is attributed to the higher gain of the InP-based material than that of the GaAs-based material. Compared with the unstrained QWIP, the InGaAs/InP QWIP with 1% compressive strain (CS) in the QWs has demonstrated three orders of magnitude dark current depressions so that higher peak detectivity of 2.9 ×1010 cm·Hz1/2/W at 1.3 V is observed for the device.
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