Abstract
A high-responsivity, low-capacitance and high-speed metal-semiconductor-metal photodetector (MSM-PD) with layer structure In0.85Ga0.15P/InP/InGaAs/InP has been fabricated and characterized. For a 50 μm × 50 μm device with 2-μm finger width and 2-μm finger spacing we obtained a front illumination at 1.3-μm wavelength responsivity of 0.71–0.73 A/W at 5-V bias. To the best of our knowledge this is the highest front illumination responsivity for MSM-PD. The mesa structure devices show a very low capacitance of less than 1 pF and a transient response bandwidth of 10 GHz at 3 dB. © 1996 John Wiley & Sons, Inc.
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