Abstract
High Responsivity in GaN Ultraviolet Photodetector Grown on a Periodic Trapezoid-Column Patterned Sapphire Substrate
Highlights
Nitride-based compounds are generally useful for optical devices such as light-emitting diodes (LEDs), laser diodes, and photodetectors (PDs) in green, blue, and ultraviolet (UV) wavelength regions.[1,2,3] The high-power UV GaN LEDs, for instance, have been intensively studied because they can be used as a pumping source for developing white-light LEDs
We investigate, for the first time, the characteristics of a GaN UV PD with an MSM structure fabricated on a periodic trapezoidcolumn patterned sapphire substrate (PTCPSS) by metalorganic chemical vapor deposition (MOCVD)
This observation can be attributed to the enhancement of the lateral overgrowth of the GaN film using the appropriate PTCPSS, which may result in threading dislocations (TDs) reduction in the GaN film
Summary
Nitride-based compounds are generally useful for optical devices such as light-emitting diodes (LEDs), laser diodes, and photodetectors (PDs) in green, blue, and ultraviolet (UV) wavelength regions.[1,2,3] The high-power UV GaN LEDs, for instance, have been intensively studied because they can be used as a pumping source for developing white-light LEDs.
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