High-responsivity dual-band ultraviolet photodetector based on Ga2O3/GaN heterostructure.

Abstract

Ultraviolet photodetectors have aroused wide concern based on wide-band-gap semiconductors, such as GaN and Ga2O3. Exploiting multi-spectral detection provides unparalleled driving force and direction for high-precision ultraviolet detection. Here we demonstrate an optimized design strategy of Ga2O3/GaN heterostructure bi-color ultraviolet photodetector, which presents extremely high responsivity and UV-to-visible rejection ratio. The electric field distribution of optical absorption region was profitably modified by optimizing heterostructure doping concentration and thickness ratio, thus further facilitating the separation and transport of photogenerated carriers. Meanwhile, the modulation of Ga2O3/GaN heterostructure band offset leads to the fluent transport of electrons and the blocking of holes, thereby enhancing the photoconductive gain of the device. Eventually, the Ga2O3/GaN heterostructure photodetector successfully realizes dual-band ultraviolet detection and achieves high responsivity of 892/950 A/W at the wavelength of 254/365 nm, respectively. Moreover, UV-to-visible rejection ratio of the optimized device also keeps at a high level (∼103) while exhibiting dual-band characteristic. The proposed optimization scheme is anticipated to provide significant guidance for the reasonable device fabrication and design on multi-spectral detection.