High responsivity and multi-wavelength response photodetector based on single bandgap AlInN film by magnetron sputtering

Abstract

The AlInN film with a band gap of 2.96 eV is prepared on glass by radio frequency magnetron sputtering. Photoluminescence spectra reveals that the emission band is originated from both the band-edge and some defect-related radiation. The interdigital AlInN photodetector based on metal−semiconductor−metal (MSM) structure exhibits photoresponse characteristics from ultraviolet to visible light. The defect energy level is responsible for the multi-wavelength response of the low-energy incident irradiation light. The photodetector exhibits the best performance under 660 nm illumination, with a responsivity of 102 A/W, an external quantum efficiency of 190% and a specific detectivity of 2.8 × 109 Jones. These three factors improve by 4–6 orders of magnitude compared to point electrodes. The AlInN MSM interdigital electrode structure provides a relatively promising candidate structure for achieving high-performance multi-wavelength photodetectors.