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Abstract
This study involves the novel fabrication of a high responsivity, fast response, and low-cost (UV) photodetector (PD) based on ZnO/Ni nanoparticles deposited on a glass substrate. The ZnO/Ni nanoparticles were synthesized using a polyol process. The structure and the morphology of the samples were characterized by X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM). Optical properties were measured using UV-visible, diffuse reflectance and photoluminescence (PL) spectroscopy. The photodetector exhibited high photoresponse characteristics under 375 nm laser excitation. Our device shows a high responsivity (121 A W−1) with rise time (about 5.52 s) and fall time (about 12 s) at a bias voltage of 1 V. The device exhibits excellent reproducibility and stability characteristics with time. The noise spectra obtained from the UV photodetector were caused by the 1/f noise. The noise-equivalent power (NEP) is 1.08 × 10−9 W. Thus, the polyol process can be a useful and effective method for improving the performance of ZnO/Ni UV photodetectors.
Highlights
IntroductionUltraviolet photodetectors (UV PDs) are widely used in the military and civil elds, for example in ame and radiation detection, optical communications, and binary switches.[1,2,3,4] In the last decade, UV detectors based on wide band gap semiconductors (such as SiC, GaN, TiO2 and ZnO5–9) have received a lot of attention
UV detectors based on wide band gap semiconductors have received a lot of attention
The crystalline structure of Ni doped ZnO nanoparticles was characterized by X-ray diffraction (XRD)
Summary
Ultraviolet photodetectors (UV PDs) are widely used in the military and civil elds, for example in ame and radiation detection, optical communications, and binary switches.[1,2,3,4] In the last decade, UV detectors based on wide band gap semiconductors (such as SiC, GaN, TiO2 and ZnO5–9) have received a lot of attention. Among the wide-band gap semiconductors, ZnO has many unique properties such as higher saturated carrier dri rate, wide band-gap and low cost.[10,11,12] ZnO has been regarded as one as the most suitable materials for the fabrication of high performance UV PDs. The polyol method can improve the surface properties of the oxide semiconductors, which could enhance the ability of the oxygen adsorption and desorption.[20] This method is a lowtemperature process that allows higher doping levels of dopant and leads to obtain nanoparticles with high crystalline quality. We report synthesis of Ni doped ZnO nanoparticles using polyol process. Paper current) of ZnO based UV PDs. Noise current behavior of the fabricated PDs will be discussed
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