Abstract
Magnetostrictive properties of Sm-Fe-N and Sm-Fe-C giant magnetostrictive material (GMM) thin film have been systematically investigated in this study. Film samples were prepared by d.c. magnetron sputtering process in Ar-N2 or Ar-CH4 gases atmosphere. Saturated magnetostriction of formed thin films was decreased with increasing of N2 and CH4 partial pressure because of formation of non-magnetic SmN or SmC2 phases. Maximum value of magnetostrictive susceptibility is 34 ppm/kAm-1 was observed in Sm-Fe-C thin film sample with 1.0 vol% CH4 gas partial pressure. Compressive stress of thin film samples was increased due to the increasing of N2 and CH4 gases pressure. The increasing of compressive stress with small N2 and CH4 addition amount into thin film samples may influence the increasing of magnetostrictive susceptibility.
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