High-resolution X-ray diffraction studies on growth interrupted heterointerfaces grown by metalorganic vapor-phase epitaxy

Abstract

We have investigated the behavior of group V atoms at growth interrupted heterointerfaces in an InP/AsH 3-exposure/InP multilayer structure grown by metalorganic vapor-phase epitaxy, whose interfaces are exposed to AsH 3 gases, by means of high-resolution X-ray diffraction on an atomic scale and its simulation technique. It is found that primary factors for the incorporation of arsenic (As) atoms into InP layers consists of two modes, one is the incorporation into the grown layer due to the substitution of phosphorus (P) atoms by As atoms, and the other is that into the subsequently grown InP layer due to the incorporation from solid deposition of As atoms on the susceptor. In the processes, P atoms are substituted by As atoms not only in the monolayer of the surface but also in the internal layer. It is also found that the depth where the As atoms are incorporated critically depends on the exposure time of the InP surface to the AsH 3 ambiance. And As atoms which replace P atoms in the monolayer of the surface are easily evaporated in the PH 3 ambiance, but it is difficult to remove the incorporated As atoms inside the grown InP layer even by a long PH 3 purge time.