Abstract
Abstract TiO2 thin films grown on sapphire (α-Al2O3) (1102) and on LaAlO3 (001) at 800° C by pulsed-laser deposition have been characterized by transmission electron microscopy. The TiO2 thin films grown on LaAlO3 (001) crystallize in anatase, while those on sapphire (1102) crystallize in rutile. The epitaxial relationship between the anatase thin films and the LaAlO3 substrate is (004)[110]A//(001)[110]L, where the subscripts A and L indicate anatase and LaAlO3 respectively, and that between the rutile thin films and the sapphire substrate is (011)[111]R//(1102)[202 1]S, where the subscripts R and S indicate rutile and sapphire respectively. The rutile thin films contain a high density of growth twins with (101) and (011)T being the twin planes and [101] being the twinning direction, where the subscript T represents a twinning plane. The atomic structure of the twin boundary, the anatase-LaAlO3 and the rutile-sapphire interfaces were investigated by high-resolution transmission electron microscopy in com...
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