Abstract
Cross-sectional high resolution transmission electron microscopy was applied to 140 keV Zn+ implanted GaAs at elevated temperature (110±10 °C). Gaussian-like in-depth distributions of damage clusters, retaining some features of the original crystal lattice, were observed. The distribution maximum was found located between about 55 and 80 nm below the implanted surface. Low-power pulsed-laser annealing of the implanted samples induced both migration and clustering of radiation defects in the region extending from the surface and 80 nm depth, combined with nearly complete recrystallization of the material below this layer.
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