Abstract
The diffusion coefficient D( T) of Cd in CdSe ZnSe single quantum well (SQW) structures grown pseudomorphically on GaAs(001) is determined by high resolution transmission electron microscopy of annealed SQWs and subsequent digital analysis of lattice images. SQWs of 2 monolayer (ML) thickness were grown by molecular beam epitaxy. During growth the CdSe quantum wells (QWs) broaden to about 7 ML CdZnSe as measured by reflection high energy electron diffraction (RHEED). We find for the diffusion coefficient of Cd in ZnSe at temperatures between 340 and 400° C D( T) = 1.9 × 10 −4 [cm 2/s] · exp(− 1.8 [eV]/ kT).
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