Abstract
AbstractHigh resolution transmission electron microscopy has been applied to study the formation of amorphous interlayers by solid-state diffusion in ultrahigh vacuum deposited Ti thin films on (001), (111) and (011)SiThe interface structures of as deposited and annealed samples were examined. The disordered regions at the a-interlayer/c-Si interfaces were found to be most and least extensive in (011) and (111) samples, respectively. Growth behaviors of a-interlayers are described. The amorphization appeared to be initiated at the grain boundaries of Ti thin films. Ti5 Si3 was identified to be the phase formed at the initial stage of the interfacial reactions by HREM in conjunction with the optical diffraction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
