High‐resolution three‐dimensional reciprocal space mapping of semiconductor nanostructures

Abstract

AbstractBy combining a 2D PILATUS 100 K detector and a surface diffractometer, high‐resolution 3D reciprocal space maps with a resolution up to 2 × 10−3 A−1 have been obtained, at an acquisition speed of 20 min per Bragg point. To illustrate the possibilities, the shape and facets of molecular beam epitaxy grown GaAs nanowires are identified by studying the diffuse scattering around Bragg points from the different crystal structures in the wires. The wires are bound by {111} facets from alternating domains with zincblende structure and its twin, creating a microfaceted wire with a hexagonal cross‐section.magnified imageIsosurface of a [$11\bar 1$] Bragg point from a GaAs nanowire with crystal truncation rods originating from the wires' microfacets.