Abstract

Photoemission spectroscopy studies with very-high-energetic resolution at third generation synchrotron radiation facilities open up new perspectives in surface science. To illustrate this, recent advances achieved from valence band studies will be described, i.e. investigation of the quantized electronic states of a two-dimensional electron gas at the InAs(110) surface. New insights gained from core level spectroscopy in the most promising soft X-ray regime will also be presented, i.e. evidence of new spectral features in Si 2p studies of low index silicon surfaces and identification of surface core level shifts in III–V semiconductors.

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