Abstract
Free-standing layers of high purity GaAs prepared by epitaxial liftoff are investigated using high resolution photoluminescence, optical transmission, and x-ray diffraction techniques. Low temperature (1.5 K) optical measurements of these thin, strain-free films yield spectra rich in structure, revealing much about the fundamental properties of the materials. X-ray diffraction analysis of layers as thin as 2000 Å produce well-resolved Pendellösung fringes, in excellent agreement with dynamical theory simulations. Once removed from their underlying substrates, these thin semiconductor cavities constitute unique systems for a variety of novel spectroscopic studies not possible in as-grown heterostructures.
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