High resolution Si 2p gas phase photoelectron spectra of model silicon compounds: implications for hydrogen adsorbed on a silicon surface

Abstract

High resolution Si 2p gas phase photoelectron spectroscopy has been used to measure the vibrational energy spacing in SiH 4 (0.295 eV) and SiD 4 (0.212 eV). These values are compared with those measured for the chemical shift (0.30 eV/hydrogen atom) of model compounds which mimic the effects of zero, one, two and three hydrogen atoms bonded to a silicon atom on a silicon surface. Implications for the interpretation of surface photoelectron spectra are discussed.