Abstract
Five-pass Fabry-Perot interferometry is used to obtain the linewidths of exciton polaritons resonant Brillouin scattered in GaAs. Both interbranch and intrabranch peaks are measured. An interpretation of the results in terms of excitons with an energy-independent damping is shown to be inadequate for GaAs. The effect of uniaxial stress is investigated and discussed. Stress-induced splitting (greater than the longitudinal-transverse splitting of the exciton) of the degenerate valence band at the $\ensuremath{\Gamma}$ point accounts for the observed decrease in the masses of the decoupled excitons. The values of these masses are in agreement with band-structure parameters. The value $\ensuremath{\delta}=0.0\ifmmode\pm\else\textpm\fi{}0.02$ meV for the exciton exchange parameter has been determined from these data.
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