Abstract
High resolution reflection electron microscopy has been applied to studies of a high index Si(5512) surface at a sub-unit cell resolution. Lattice fringes with different widths were found to be directly corresponding to the subunits of the (5512) surface. Defects on the surface were resolved as nano-facets with close orientation to (5512). (131331) and (7717) facets were identified based on the subunit arrangement. An incommensurate structure (q=a*bk/2.43) was revealed at a temperature just below the roughening transition. Formation of an incommensurate structure as well as defects was discussed in terms of surface steps.
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