Abstract

We have succeeded in patterning narrow lines and dots with nano-scale dimensions of ZnS–SiO 2 using Al 90Ni 3Gd 7 metallic glass thin film as the thermal absorption layer. The laser thermal lithography technique was carried out using a semiconductor laser with 405 nm wavelength. The demonstrated resolution of the patterns produced is far beyond the diffraction limit of 200 nm given by our optical setup. The use of metallic glass as the thermal absorption layer has a number of advantages, including providing a cost-effective approach, high performance such as high selectivity and high aspect (height to width) ratio, loose environment requirement, reliable and stable compared with existing thermal absorption chalcogenide-based phase change layer materials, such as GeSbTe and AgInSbTe.

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