High-Resolution Laser Interference Ablation and Amorphization of Silicon.

Abstract

The laser interference patterning of a silicon surface via UV femtosecond pulse irradiation, resulting in 350 nm periodic structures, is demonstrated. The structuring process was performed using a laser with a 450 fs pulse duration at a wavelength of 248 nm in combination with a mask projection setup. Depending on the laser fluence, single-pulse irradiation leads to amorphization, structure formation via lateral melt flow or the formation of voids via peculiar melt coalescence. Through multipulse irradiation, combined patterns of interference structures and laser-induced periodic surface structures (LIPSS) are observed.