Abstract

SummaryFormulation processing of organic crystalline compounds can have a significant effect on drug properties, such as dissolution rate or tablet strength/hardness. Transmission electron microscopy (TEM) has the potential to resolve the atomic lattice of these crystalline compounds and, for example, identify the defect density on a particular crystal face, provided that the sensitivity of these crystals to irradiation by high‐energy electrons can be overcome. Here, we acquire high‐resolution (HR) lattice images of the compound furosemide using two different methods: low‐dose HRTEM and bright‐field (BF) scanning TEM (STEM) scanning moiré fringes (SMFs). Before acquiring HRTEM images of furosemide, a model system of crocidolite (asbestos) was used to determine the electron flux/fluence limits of low‐dose HR imaging for our scintillator‐based, complementary metal‐oxide semiconductor (CMOS) electron camera by testing a variety of electron flux and total electron fluence regimes. An electron flux of 10 e−/(Å2 s) and total fluence of 10 e−/Å2 was shown to provide sufficient contrast and signal‐to‐noise ratio to resolve 0.30 nm lattice spacings in crocidolite at 300 kV. These parameters were then used to image furosemide which has a critical electron fluence for damage of ≥10 e−/Å2 at 300 kV. The resulting HRTEM image of a furosemide crystal shows only a small portion of the total crystal exhibiting lattice fringes, likely due to irradiation damage during acquisition close to the compound's critical fluence. BF‐STEM SMF images of furosemide were acquired at a lower electron fluence (1.8 e−/Å2), while still indirectly resolving HR details of the (001) lattice. Several different SMFs were observed with minor variations in the size and angle, suggesting strain due to defects within the crystal. Overall BF‐STEM SMFs appear to be more useful than BF‐STEM or HRTEM (with a CMOS camera) for imaging the crystal lattice of very beam‐sensitive materials since a lower electron fluence is required to reveal the lattice. BF‐STEM SMFs may thus prove useful in improving the understanding of crystallization pathways in organic compounds, degradation in pharmaceutical formulations and the effect of defects on the dissolution rate of different crystal faces. Further work is, however, required to quantitatively determine properties such as the defect density or the amount of relative strain from a BF‐STEM SMF image.

Highlights

  • For the pharmaceutical industry, obtaining atomic lattice resolution images of organic crystalline compounds can provide important information on the effects of formulation processing on drug properties

  • Crocidolite, the fibrous form of the mineral riebeckite (COD ID: 9004132) and recognized as one of the six types of asbestos, was purchased from Agar Scientific Ltd and dispersed on a thin film for Transmission electron microscopy (TEM) (Hawthorne, 1978). This was used as a model system to test the minimum electron flux/fluence required to obtain HRTEM images on our complementary metal-oxide semiconductor (CMOS) camera, due to being relatively electron beam stable compared to organic crystals, and because it contains large lattice spacings in the range of 7–9.5 A, similar to those found in furosemide

  • HRTEM images acquired at total electron fluences of 1, 10 and 100 e−/A 2 and at three different electron fluxes 1, 10 and 100 e−/(A 2 s) of the same area of crocidolite are shown in Figure 1, alongside the fast Fourier transform (FFT) for each image

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Summary

Introduction

For the pharmaceutical industry, obtaining atomic lattice resolution images of organic crystalline compounds can provide important information on the effects of formulation processing on drug properties. Milling is routinely used to decrease particle size and improve dissolution rates of poorly water-soluble, active pharmaceutical ingredients (APIs) (Naik & Chaudhuri, 2015). Crystalline defects at particular crystal faces can influence dissolution rates, due to a change in interfacial dissolution kinetics, governed by the energetics of the free surface (Macpherson & Unwin, 1995). Dislocations are thought to be important drivers of etch pit formation during dissolution, leading to an increase in specific surface area and the formation of microdomains of higher surface energy (Perry et al, 2015; Adobes-Vidal et al, 2016)

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