Abstract
Measurements are reported for x-ray diffraction topography (XRDT) images of implantation and superstructure details in an integrated circuit device investigated with the reflection method of line modified-asymmetric crystal topography (LM-ACT). The x-ray penetration depth and the micron grain size of thin-film nuclear emulsions used to record the diffraction images are shown to limit spatial resolution in the x-ray topographs.
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