Abstract
New inorganic electron-beam resists have been developed on the basis of the aqueous chemistries of Zr and Hf. With a 30-keV electron-beam, resist sensitivities as low as 8 μC/cm 2 have been realized. At higher exposure doses, 15-nm lines and 36-nm dense features have been written with line-width roughness near 2 nm. In reactive-plasma etching, the resists exhibit etch resistance >7× that of thermal SiO 2.
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