Abstract
The combination of etching, photoetching, electron diffraction and high resolution electron microscopy techniques was used to characterize twins in GaAs. These techniques were applied to study (001) oriented samples taken from Si-doped n-type horizontal Bridgman GaAs crystals containing twins. From photoetching and etching it is concluded that the intersection of the twin plane with the (001) plane is parallel to [1 1 0] and that the twin plane is of the [111] type. Selected area electron diffraction and high resolution electron microscopy (HREM) on chemically thinned samples, performed on matrix and twin areas, showed the twin to be a 180° rotation twin or a reflection twin with a (111) composition plane. The model is further confirmed by image calculations. HREM observations also reveal the presence of a thin surface contamination layer of unknown composition on the twin portion of the sample. However this layer did not influence the high resolution images of the GaAs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
