High resolution electron beam lithography and applications to superconducting devices

Abstract

High resolution electron beam lithographic techniques are essential for the fabrication of a wide variety of present and future electronic electronic devices and integrated circuits. Advanced structures have been made for silicon, bubble and superconducting technologies. The e‐beam lithography techniques used to obtain the highest possible resolution will be reviewed and our recent results using electron‐beam produced contamination layers will also be presented. These high resolution techniques have been used to make superconducting Nb anaostripes with widths of 25−50 nm. The I−V characteristics for these bridges will be presented along with transmission electron micrographs of the structures.