Abstract
Electron-beam-induced-current (EBIC) investigations of GaN structures grown bymetal–organic chemical vapour deposition on (0001) sapphire substrates havebeen carried out. It is shown that the widths of the EBIC profiles forindividual extended defects can be as small as about 100 nm. This width isobserved to decrease with decreasing diffusion length and/or with increasingelectron beam energy. The high spatial resolution is explained by the smalldiffusion length in the samples under study. The diffusion length is smalleven in structures with dislocation densities of about 108 cm−3 and carriermobilities of about 600 cm2 V−1 s−1 at 300 K and 1800 cm2 V−1 s−1 at 125 K.
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