Abstract
High-resistive layers were obtained by periodic growth and in situ annealing of InGaN. The effect of the annealing temperature of InGaN on the indium content and the material sheet resistive was investigated. The indium content decreased as the increase of in situ annealing temperature. Additionally, the material sheet resistance increased with the increase of the in situ annealing temperature for the annealed samples and reached 2 × 1010Ω/sq in the light and 2 × 1011Ω/sq in the dark when the in situ annealing temperature reached 970∘C. The acquirement of high-resistive layers is attributed to the generation of indium vacancy-related defects. Introducing indium vacancy-related defects to compensate background carriers can be an effective method to grow high-resistance material.
Highlights
High-electron-mobility transistors (HEMT) based on AlGaN/GaN heterostructures have exhibited outstanding performances in high-power and high-frequency applications.[1,2] High-resistivity (HR) GaN layers are important for electronic devices in order to ensure proper drain-source current saturation, complete channel pinch-off, low loss at high frequencies, and low cross-talk between adjacent devices.[3]
We found that the sheet resistance of samples increased as the decrease of indium content and we attribute the increase of the sheet resistance to indium vacancy-related defects
The effect of thin InGaN layers annealing was studied by changing the in situ annealing temperature between 910◦C and 970◦C
Summary
High-electron-mobility transistors (HEMT) based on AlGaN/GaN heterostructures have exhibited outstanding performances in high-power and high-frequency applications.[1,2] High-resistivity (HR) GaN layers are important for electronic devices in order to ensure proper drain-source current saturation, complete channel pinch-off, low loss at high frequencies, and low cross-talk between adjacent devices.[3] it is well known that GaN exhibits high unintentional n type doping levels due to residual oxygen donors and nitrogen vacancy-related impurities introduced during the heteroepitaxy.[4,5,6] Generally, The methods to obtain HR GaN include intentionally generating defects such as high densities of edge dislocation, and doping of iron (Fe) or carbon (C) atoms.[7,8,9]. The C-doped HR GaN can be grown by tuning the growth parameters such as temperature, pressure, and V/III ratio, but the tuned growth parameters will result in the degrading of crystalline quality[11] and the C dopant has been shown to produce a strong current collapse when incorporated in the vicinity of the channel.[12]
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