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Abstract
A field-effect configuration based on La0.9Sr0.1MnO3/SrTiO3/Si structure is fabricated on Si substrate by laser molecular-beam epitaxy. The resistance modulation by electric field of the La0.9Sr0.1MnO3/SrTiO3/Si structure is investigated in detail. An evident resistance modulation effect is observed at 80 K. The channel resistance modulation by field effect reaches 1.4×107% and 2.6×106% when V DS are −2 and −6.5 V, respectively. The ON/OFF ratio of approximately 4000 is obtained. The present results are worthy of further investigations for potential applications of resistance modulation by electrostatic field in the heterostructures consisting of perovskite oxides and Si.
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