High repetition rate deposition of boron nitride films using femtosecond pulsed laser

Abstract

Cubic (c-BN), and hexagonal (h-BN) boron nitride thin films are of interest in many applications and industries because of their unique mechanical, thermal and chemical properties. In this work, we investigate high repetition rate deposition of BN films using femtosecond pulsed laser deposition. Boron nitride (BN) films were deposited on silicon wafers using 800 nm, 100 fs Ti:sapphire femtosecond laser with 2.4 mJ pulse energy and high repetition rate of 1 kHz using a c-BN target. The deposited films were analyzed using transmission electron microscopy (TEM), scanning electron microscope (SEM), and optical profilometer. Nano-indentation tests were performed to measure the hardness of the adhered film. The results indicate the influence of the high repetition rate on the film growth, crystalline arrangement and adhesion. The experimental work is utilized to identify the process parameters that can be used in pulsed laser deposition (PLD) process to grow thick and adherent BN films.