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Abstract
SrBi 2 Ta 2 O 9 (SBT) thin films with different concentrations of Ca at the Sr-site were grown on platinized silicon substrates. A systematic shift of diffraction lines towards higher diffraction angle confirmed the decrease in lattice parameter and attributed to the smaller ionic radii of Ca than for Sr. The grain size of the films was found to be increased upon Ca incorporation in SBT. The dielectric constant of the SBT films was systematically decreased with increasing Ca contents and it was attributed to lower dielectric permittivity of CaBi2Ta2O9 system. The ferroelectric properties were gradually increased up to 25% Ca at the Sr site, above which the ferroelectric properties started degrading. The maximum value of remanent polarization (∼23.8 μC/cm2) of the films was obtained at 20% Ca substituted SBT. The systematic increase in coercive field was attributed to the higher electronegativity of Ca. The films showed minimal fatigue degradation (<23%) after 1010 switching cycles. Substitution of Ca (up to 25%) in SBT thin films did not show any pronounced influence on leakage current characteristics.
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