Abstract
This paper reports the TEOS oxide deposited on the polysilicon film which was prepared by using the disilane chemical vapor deposition. Compared to the thermally grown oxide or TEOS (tetra-ethyl-ortho-silicate) oxide deposited on the conventional silane polysilicon film, it had symmetrical J-E characteristics that had lower leakage currents but much higher breakdown field, a lower electron trapping rate, and a much larger charge to breakdown. These good properties are attributed to the smoother surface of the deposited disilane poly-I film and the more incorporation of nitrogen during the rapid thermal annealing (RTA) in N/sub 2/O ambient. It is suitable to be as the inter-polyoxide of the electrically-erasable programmable read only memory (EEPROM).
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