Abstract
For compact and high-sensitivity 10 Gb/s optical receiver applications, we have developed low-dark-current planar-structure InAlGaAs-InAlAs superlattice avalanche photodiodes with a Ti-implanted guard-ring. The APDs exhibited dark current as low as 0.36 /spl mu/A at a gain of 10. The temperature dependence of the dark current was confirmed to be in a sufficient level for practical 10-Gb/s applications. The APDs also exhibited a quantum efficiency of 67%, a gain-bandwidth-product of 110 GHz, a top 3-dB bandwidth of 15.2 GHz, and a minimum gain for 10-GHz bandwidth of 1.6. Preliminary aging test also showed a stable dark current operation after aging of over 2200 h at 200/spl deg/C. These high-reliability, low-dark-current, high-speed, and wide-dynamic-range characteristics are promising for 10-Gb/s high-sensitivity optical receiver use.
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