Abstract
We report an InGaP/GaAs multilayer grown by low-pressure MOCVD for highly reliable 0.98-µ m InGaAs vertical-cavity surface-emitting lasers. High reflectivity of over 99% is obtained for the 45-period multilayer. The stability of the layer thickness over the entire multilayer is discussed from the viewpoint of the asymmetrical reflectivity spectrum. Our results indicate that the layer thickness slightly decreases during epitaxial growth.
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