Abstract
Reflector stacks grown for use in devices operating at 1.55μm on InP substrates normally use lattice matched quaternary alloys and a large number of periods to obtain a high reflectivity. In this work therefore we have investigated the use of Al0.65In0.35As/Ga0.63In0.37As ternary layers, which are ∼ 1% strained with respect to the substrate. Results show that over 80% reflectivity and a low resistance can be obtained with only a 12 period structure.
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