High recoverable energy storage density of Na0.5Bi0.5TiO3 lead-free ceramics modified by Bi(Mg0.5Hf0.5)O3

Abstract

Enhancing the availability and reliability of dielectric ceramic energy storage devices is of great importance. In this work, (1-[Formula: see text])[Formula: see text]–[Formula: see text]Bi([Formula: see text])[Formula: see text] (NBT–[Formula: see text]BMH) lead-free ceramics were created utilizing a solid-state reaction technique. All NBT–[Formula: see text]BMH ceramics have a single perovskite structure. With increasing BMH doping, the grain size shrinks drastically, which greatly enhances the breakdown electric field (310 kV/cm at [Formula: see text] = 0.25). Additionally, the relaxation behaviors of NBT–[Formula: see text]BMH ceramics with high BMH content are more remarkable. Among all designed components, the NBT–0.25BMH ceramic exhibits the best energy storage performance with a high [Formula: see text] of 4.63 J/[Formula: see text] and an [Formula: see text] of 75.1% at 310 kV/cm. The NBT–0.25BMH ceramic has exceptional resistance to fluctuations in both frequency (5–500 Hz) and temperature (30–100[Formula: see text]C). Charge–discharge test shows that the NBT–0.25BMH ceramic has a quick discharge rate ([Formula: see text] 110 ns). With these properties, the NBT–0.25BMH ceramic may have applications in microdevices as well as in ultra-high power electronic systems.