High-rate sputter deposition of chromium oxide thin films using water vapor as a reactive gas

Abstract

The use of water vapor as a reactive gas under metallic mode for high rate sputter deposition of chromium oxide thin films have been studied in the course of this research. Chromium oxide (Cr2O3) thin films were deposited by an RF magnetron sputtering system with chromium metal as a target and argon (Ar) and water vapor (H2O) as the sputtering gas. Water was injected to the target or substrate surface at an H2O flow ratio of H2O/(H2O + Ar), varied from 0 to 100%. A liquid nitrogen cold trap was placed in the sputtering chamber to adsorb non-reacted H2O molecules.When the cold trap was inactive, the deposition rate and discharge voltage dropped and the transmittance of the films increased above an H2O flow ratio of 10%. Discharge voltage and plasma emission measurements showed that Cr2O3 films were deposited under compound target mode. In contrast, when the cold trap was active, the deposition rate increased with increase in H2O flow ratio and also a gradual increase in the transmittance of the films was observed. Hence, the target surface was considered to be almost in a metallic state and the oxidation proceeded gradually. Results of this study indicate that H2O sputtering using cold trap is a promising method for the formation of chromium oxide thin films at high deposition rates under metallic target mode.