Abstract

AbstractSiO2 thin films were deposited by a cold arc plasma jet at atmospheric pressure. The cold arc plasma jet was operated with O2 gas of 30 L · min−1, while a He/TEOS mixture of 1 000 sccm was added to the plume of the plasma jet as a precursor. The plasma jet was continuously moved in the xy direction for uniform film thickness. The deposition rate at various conditions was studied by controlling the substrate distance, precursor inlet position, and substrate temperature; the physical and chemical properties of the films were characterized by SEM and XPS. A high deposition rate was attained using the cold arc plasma jet deposition system in open air; it is suggested that this originates from the abundant oxygen atoms produced in the cold arc plasma jet.magnified image

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.