Abstract
AbstractTo realize high‐rate, low‐temperature sputtering, two parallel targets were used and a magnetic field was applied perpendicular to them. The γ‐electrons emitted by the targets contribute to formulation of a high‐density plasma between the targets and to controlling the γ‐electrons striking the substrates. As a result, the authors were successful in depositing such magnetic materials as iron and nickel on a substrate without heating at 50 times the rate in ordinary diode sputtering. This method also prevents high‐energy ions from hitting the substrate and permits deposition of a film of large area with uniform thickness. The observed profile of the film thickness agreed with the calculated one in which the cosine law of sputtering was assumed. A practical model of the present sputtering apparatus was fabricated with permanent magnets and its performance was investigated.
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